BFQ270 Datasheet, PDF (8/12 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFQ270
handbook^−,³h⁰alfpage
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(dB)
−40
MRA739
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−70
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125
175
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275
IC (mA)
3-tone d_im; (V_CE = 18 V);
f_p = 445.25 MHz; V_o = 65.11 dBmV (1.8 V);
f_q = 453.25 MHz; V_o = 59.11 dBmV;
f_r = 455.25 MHz; V_o = 59.11 dBmV;
f_(p+q-r) = 443.25 MHz.
Fig.12 Intermodulation distortion as a function of
collector current.
handbook^−,³h⁰alfpage
dim
(dB)
−40
MRA740
−50
−60
−70
75
125
175
225
275
IC (mA)
3-tone d_im; (V_CE = 18 V);
f_p = 795.25 MHz; V_o = 64.08 dBmV (1.6 V);
f_q = 803.25 MHz; V_o = 58.08 dBmV;
f_r = 805.25 MHz; V_o = 58.08 dBmV;
f_(p+q-r) = 793.25 MHz.
Fig.13 Intermodulation distortion as a function of
collector current.
handbook^−,³h⁰alfpage
d2
(dB)
−40
MRA738
−50
−60
−70
−80
75
125
175
225
275
325
IC (mA)
V_CE = 18 V;
f_p = 50 MHz; V_o = 50.5 dBmV (0.335 V);
f_q = 400 MHz; V_o = 50.5 dBmV;
f_(p+q) = 450 MHz.
Fig.14 Second order intermodulation distortion as
a function of collector current.
handbook^−,³h⁰alfpage
d2
(dB)
−40
MRA737
−50
−60
−70
−80
75
125
175
225
275
325
IC (mA)
V_CE = 18 V;
f_p = 250 MHz; V_o = 50.5 dBmV (0.335 V);
f_q = 560 MHz; V_o = 50.5 dBmV;
f_(p+q) = 810 MHz.
Fig.15 Second order intermodulation distortion as
a function of collector current.
September 1995
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