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BFQ270 Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor | |||
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Philips Semiconductors
NPN 6 GHz wideband transistor
Product speciï¬cation
BFQ270
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to Tc = 100 °C
MIN. MAX. UNIT
â
25
V
â
19
V
â
2
V
â
500 mA
â
10
W
â65 150 °C
â
200 °C
THERMAL RESISTANCE
SYMBOL
Rth j-c
PARAMETER
thermal resistance from junction to case
THERMAL RESISTANCE
10 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
Ccs
collector-stud capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
VO
output voltage
d2
second order intermodulation
distortion
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 18 V
â â 100 µA
IC = 240 mA; VCE = 18 V
60 110 â
IE = ie = 0; VCB = 18 V; f = 1 MHz
â
3.6 â
pF
IC = ic = 0; VEB = 0.5 V; f = 1 MHz â
11 â
pF
IC = 0; VCB = 18 V; f = 1 MHz
2 2.6 â
pF
â 1.2 â
pF
IC = 240 mA; VCE = 18 V; f = 1 GHz; 4.5 6 â
Tamb = 25 °C
IC = 240 mA; VCE = 18 V;
f = 500 MHz; Tamb = 25 °C
â 16 â
IC = 240 mA; VCE = 18 V; f = 1 GHz; â
Tamb = 25 °C
10 â
note 2
â 1.6 â
GHz
dB
dB
V
note 3
â â50 â
dB
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim = â60 dB (DIN 45004); IC = 240 mA; VCE = 18 V; RL = 75 â¦;
GUM
=
10
log-ï£ï£«---1-----â------S----1---1----2S----2--ï£ï£«-1---1-2----â------S----2--2-----2---- dBË
Vp = VO; fp = 795.25 MHz;
Vq = VO â6 dB; fq = 803.25 MHz;
Vr = VO â6 dB; fr = 805.25 MHz;
measured at f(p+qâr) = 793.25 MHz.
3. IC = 240 mA; VCE = 18 V; RL = 75 â¦;
Vp = Vq = VO = 50.5 dBmV = 335 mV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
September 1995
3
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