BFQ270 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFQ270
FEATURES
• High power gain
• Emitter-ballasting resistors for
good thermal stability
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon NPN transistor mounted in a
4-lead dual-emitter SOT172A1.
envelope with a ceramic cap. All
leads are isolated from the mounting
base.
It is primarily intended for use in
MATV and CATV amplifiers.
PINNING
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
page
4
3
1
Top view
2
MBC869
Fig.1 SOT172A1.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
V_O
output voltage
CONDITIONS
open emitter
open base
up to T_c = 100 °C
I_C = 240 mA; V_CE = 18 V; T_j = 25 °C
I_C = 240 mA; V_CE = 18 V; f = 1 GHz;
T_amb = 25 °C
I_C = 240 mA; V_CE = 18 V;
f = 800 MHz; T_amb = 25 °C
d_im = −60 dB; I_C = 240 mA;
V_CE = 18 V; R_L = 75 Ω;
f_(p+q-r) = 793.25 MHz
MIN. TYP. MAX. UNIT
−−
−−
−−
−−
60 −
−6
25 V
19 V
500 mA
10 W
−
−
GHz
− 10 −
dB
− 1.6 −
V
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2