BFG505W Datasheet, PDF (8/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X
handbook, full pagewidth
pot. unst.
region
135°
0.5
stability
circle
0.2
0.2
0.5
180° 0
0.2
90°
1
2
45°
5
Fmin = 1. 2 dB
F = 1.5 dB^ΓOPT
1
2
5
F = 2 dB
F = 3 dB
5
1.0
0.8
0.6
0.4
0.2
0° 0
0.5
−135°
f = 900 MHz; V_CE = 6 V; I_C = 1.25 mA; Z_o = 50 Ω.
1
−90°
2
−45°
MRA652
1.0
Fig.14 Common emitter noise figure circles; typical values.
handbook, full pagewidth
pot. unst.
90°
region
1
135°
0.5
2
45°
stability
circle
180°
0.2
0.2
0
0.2
Γ_OPT
Fmin = 1. 9 dB
5
F = 2.5 dB
0.5
1
2
5
F = 3 dB
F = 4 dB
5
1.0
0.8
0.6
0.4
0.2
0° 0
0.5
−135°
f = 2 GHz; V_CE = 6 V; I_C = 1.25 mA; Z_o = 50 Ω.
1
−90°
2
−45°
MRA653
1.0
Fig.15 Common emitter noise figure circles; typical values.
1998 Oct 02
8