BFG505W Datasheet, PDF (11/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X
SPICE parameters for the BFG505W(/X) die
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
134.1 aA
2
BF
180.0 −
3
NF
0.988 −
4
VAF
38.34 V
5
IKF
150.0 mA
6
ISE
27.81 fA
7
NE
2.051 −
8
BR
55.19 −
9
NR
0.982 −
10
VAR
2.459 V
11
IKR
2.920 mA
12
ISC
17.45 aA
13
14
15
16
17
18
19 ⁽¹⁾
20 ⁽¹⁾
21 ⁽¹⁾
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.062 −
20.00 Ω
1.000 µA
20.00 Ω
1.171 Ω
4.350 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
284.7 fF
23
VJE
600.0 mV
24
MJE
0.303 −
25
TF
7.037 ps
26
XTF
12.34 −
27
VTF
1.701 V
28
ITF
30.64 mA
29
PTF
0.000 deg
30
CJC
242.4 fF
31
VJC
188.6 mV
32
33
34
35 ⁽¹⁾
MJC
XCJC
TR
CJS
0.041 −
0.130 −
1.332 ns
0.000 F
SEQUENCE No.
36 ⁽¹⁾
37 ⁽¹⁾
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.897 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C _cb
L1
B
C _be
LB
B' C'
E'
LE
L3
L2
C
Cce
MBC964
E
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c)
f_c = scaling frequency = 1 GHz.
Fig.20 Package equivalent circuit SOT343N.
List of components (see Fig.20)
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3
L_B
L_E
VALUE
70
50
115
0.34
0.10
0.25
0.40
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
1998 Oct 02
11