BFG505W Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,
satellite television tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
TYPE NUMBER
BFG505W
BFG505W/X
CODE
N0
N1
PINNING
PIN
1
2
3
4
DESCRIPTION
BFG505W
BFG505W/X
collector
base
emitter
emitter
collector
emitter
base
emitter
handbook, halfpage
4
3
1
Top view
2
MBK523
Fig.1 Simplified outline SOT343N.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
G_UM
|S₂₁|²
F
collector-base voltage open emitter
collector-emitter voltage R_BE = 0
collector current (DC)
total power dissipation T_s ≤ 85 °C
DC current gain
I_C = 5 mA; V_CE = 6 V
feedback capacitance I_C = 0; V_CB = 6 V; f = 1 MHz
transition frequency
maximum unilateral
power gain
I_C = 5 mA; V_CE = 6 V; f = 1 GHz; T_amb = 25 °C
I_C = 5 mA; V_CE = 6 V; f = 900 MHz; T_amb = 25 °C
I_C = 5 mA; V_CE = 6 V; f = 2 GHz; T_amb = 25 °C
insertion power gain
noise figure
I_C = 5 mA; V_CE = 6 V; f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = 1.25 mA; V_CE = 6 V; f = 2 GHz
MIN. TYP. MAX. UNIT
−
−
20 V
−
−
15 V
−
−
18 mA
−
−
500 mW
60 120 250
−
0.2 −
pF
−
9
−
GHz
−
19 −
dB
12 −
dB
15 16 −
dB
−
1.9 −
dB
1998 Oct 02
2