BFG505W Datasheet, PDF(4/16 Page) NXP Semiconductors

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BFG505W Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

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Philips Semiconductors

NPN 9 GHz wideband transistors

Product speciï¬cation

BFG505W; BFG505W/X

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO

V(BR)CES

V(BR)EBO

ICBO

hFE

Cre

GUM

|S21|2

PL1

ITO

collector-base breakdown voltage IC = 2.5 ÂµA ; IE = 0

collector-emitter breakdown voltage IC = 10 ÂµA; RBE = 0

emitter-base breakdown voltage IE = 2.5 ÂµA; IC = 0

collector leakage current

VCB = 6 V; IE = 0

DC current gain

IC = 5 mA; VCE = 6 V see Fig.3

transition frequency

IC = 5 mA; VCE = 6 V; f = 1 GHz;

Tamb = 25 Â°C; see Fig.5

collector capacitance

IE = ie = 0; VCB = 6 V; f = 1 MHz

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz;

see Fig.4

maximum unilateral power gain;

note 1

insertion power gain

noise ï¬gure

IC = 5 mA; VCE = 6 V; f = 900 MHz;

Tamb = 25 Â°C

IC = 5 mA; VCE = 6 V; f = 2 GHz;

Tamb = 25 Â°C

IC = 5 mA; VCE = 6 V; f = 900 MHz;

Tamb = 25 Â°C

Îs = Îopt; IC = 1.25 mA; VCE = 6 V;

f = 900 MHz

Îs = Îopt; IC = 5 mA; VCE = 6 V;

f = 900 MHz

Îs = Îopt; IC = 1.25 mA; VCE = 6 V;

f = 2 GHz

output power at 1 dB gain

compression

third order intercept point

IC = 5 mA; VCE = 6 V; f = 900 MHz;

RL = 50 â¦; Tamb = 25 Â°C

note 2

MIN. TYP. MAX. UNIT

20 â

15 â

2.5 â

50 nA

60 120 250

GHz

0.3 â

0.4 â

0.2 â

19 â

12 â

15 16 â

1.2 1.7 dB

1.6 2.1 dB

1.9 â

dBm

10 â

dBm

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero. GUM

2. IC = 5 mA; VCE = 6 V; RL = 50 â¦; Tamb = 25 Â°C;

log -(---1-----â------S----1---1----S2---)-2---1(---1-2----â------S----2--2-----2---)-

dB.

fp = 900 MHz; fq = 902 MHz;

measured at 2fp â fq = 898 MHz and 2fq â fp = 904 MHz.

1998 Oct 02

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