BFG11W Datasheet, PDF (8/12 Pages) NXP Semiconductors – NPN 2 GHz power transistor

Philips Semiconductors
NPN 2 GHz power transistor
Product specification
BFG11W/X
12
handbook_Z, _ihalfpage
(Ω)
10
xi
8
6
4
2
0
1800
ri
1850
1900
MGD415
1950
2000
f (MHz)
handbook,²h⁰alfpage
ZL
(Ω)
RL
16
MGD416
12
8
4
0
1800
XL
1850
1900
1950
2000
f (MHz)
V_CE = 3.6 V; V_BE = 0.65 V; P_L = 400 mW.
Fig.7 Input impedance as a function of frequency
(series components), typical values.
V_CE = 3.6 V; V_BE = 0.65 V; P_L = 400 mW.
Fig.8 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Zi
ZL _MBA451
Fig.9 Definition of transistor impedance.
1996 Jun 04
8