BFG11W Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 2 GHz power transistor

Philips Semiconductors
NPN 2 GHz power transistor
Product specification
BFG11W/X
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CES
h_FE
C_c
C_re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
I_C = 0.1 mA; open emitter
I_C = 10 mA; open base
I_E = 0.1 mA; open collector
V_CE = 8 V; V_BE = 0
V_CE = 5 V; I_C = 100 mA
V_CB = 3.6 V; I_E = i_e = 0; f = 1 MHz
V_CE = 3.6 V; I_C = 0; f = 1 MHz
MIN.
20
8
2.5
−
25
−
−
MAX. UNIT
−
V
−
V
−
V
100 µA
−
5
pF
4
pF
APPLICATION INFORMATION
RF performance at T_s ≤ 60 °C in a common-emitter test circuit.
MODE OF OPERATION
f
V_CE
I_CQ
P_L
G_p
η_c
(GHz)
(V)
(mA) (mW)
(dB)
(%)
Pulsed, class-AB, δ < 1 : 2; t_p = 5 ms
1.9
3.6
1
400
≥6
≥60
Ruggedness in class-AB operation
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions at f = 1.9 GHz: t_p = 1.25 ms, δ = 1 : 8 at V_CE = 7 V and t_p = 5 ms, δ = 1 : 2 at
V_CE = 4.5 V.
handbook, h⁸alfpage
Gp
Gp
(dB)
6
η_C
4
MGD412
90
η_C
(%)
70
0
handbook, halfpage
dim
(dBc)
−20
dim
50
−40
MGD552
80
η_c
(%)
60
40
2
30
0
10
0
200
400
600
800
PL (mW)
V_CE = 3.6 V; V_BE = 0.65 V; f = 1.9 GHz; δ < 1 : 8; t_p = 1.25 ms.
Fig.3 Power gain and efficiency as functions
of load power; typical values.
1996 Jun 04
−60
η_c
20
−80
0
0
10
20
30
Po(av) (dBm)
V_CE = 3.6 V; I_cϕ = 1 mA; f₁ = 1990.0 MHz;
f₂ = 1990.1 MHz; δ = 1 : 8; t_p = 625 µs.
Fig.4 Two tone intermodulation distortion
and efficiency as functions of average
output power; typical values.
4