BFG11W Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN 2 GHz power transistor

Philips Semiconductors
NPN 2 GHz power transistor
Product specification
BFG11W/X
List of components used in test circuit (see Figs 5 and 6)
COMPONENT
C1, C8, C9, C10
C2, C3
C4
C5
C6, C7,
C11, C12, C13
C14, C15
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11, L12
R1
R2
R3
T1
DESCRIPTION
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
electrolytic capacitor
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
RF choke
metal film resistor
metal film resistor
metal film resistor
bias transistor
VALUE
DIMENSIONS
24 pF
2 pF
1.2 pF
0.2 pF
1.3 pF
10 nF
470 µF; 10 V
length 22.5 mm
width 0.9 mm
length 6 mm
width 0.9 mm
length 1 mm
width 0.9 mm
length 2.5 mm
width 0.9 mm
length 4.5 mm
width 0.9 mm
length 24.5 mm
width 0.9 mm
length 20 mm
width 0.9 mm
length 10.5 mm
width 0.9 mm
length 4.4 mm
width 0.4 mm
length 19.7 mm
width 0.4 mm
1 µH
78.7 Ω; 0.4 W
38.3 Ω; 0.4 W
10 Ω; 0.4 W
BC548; note 3
CATALOGUE N0.
2222 032 14152
4330 030 36301
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric ε_r = 6.15;
tan δ = 0.0019; thickness = 0.64 mm; copper cladding = 35 µm.
3. Or equivalent (V_BE = 0.65 V at T_amb = 25 °C).
1996 Jun 04
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