BFG11W Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 2 GHz power transistor

Philips Semiconductors
NPN 2 GHz power transistor
Product specification
BFG11W/X
FEATURES
• High power gain
• High efficiency
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures excellent reliability
• Linear and non-linear operation.
PINNING - SOT343
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
APPLICATIONS
• Common emitter class-AB operation in handheld radio
equipment at 1.9 GHz such as DECT, PHS.
• Driver for DCS 1800.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic 4-pin dual-emitter SOT343 package.
handbook, halfpage
4
3
1
Top view
2
MBK523
Marking code: S4
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T_s ≤ 60 °C in a common-emitter test circuit.
MODE OF OPERATION
f
V_CE
P_L
G_p
η_c
(GHz)
(V)
(mW)
(dB)
(%)
Pulsed, class-AB, δ < 1 : 2; t_p = 5 ms
1.9
3.6
400
≥6
≥60
1996 Jun 04
2