UMA1015AM Datasheet, PDF (7/24 Pages) NXP Semiconductors – Low-power dual frequency synthesizer for radio communications

Philips Semiconductors
Low-power dual frequency synthesizer
for radio communications
Product specification
UMA1015AM
Table 5 Charge pump current ratio
CRA/CRB
0
1
CURRENT AT PUMP
I_CP = 12 × I_SET
I_CP = 24 × I_SET
Table 6 Reference division ratio
SR
SYNTHESIZER A
0
R
1
R
SYNTHESIZER B
R
2R
Power-down modes
The device can be powered down either via pin HPD
(active LOW = power-down) or via the serial bus
(bits sPDA and sPDB, logic 0 = power-down).
The synthesizers are powered up when both hardware
and software Power-down signals are at logic 1. When
only one synthesizer is powered down, the functions
common to both will be maintained (independent of the
state of sPBF). When both synthesizers are powered
down, the f_xtal buffer can be maintained in an active state
by setting sPBF to logic 1. This will allow any system clock
derived from the f_XTALO buffered output to remain on in
power-down. Note that sPBF is independent of the state of
HPD. When both synthesizers are switched off, the
voltage doubler (if enabled) will remain active drawing a
reduced current. An internal oscillator will drive the doubler
in this situation. If both synthesizers have been in a
power-down condition, then when one or both
synthesizers are reactivated, the reference and main
dividers restart in such a way as to avoid large random
phase errors at the phase comparator.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
V_DD1, V_DD2 DC range of digital power supply voltage with respect to DGND
−0.3
V_CC
DC charge pump supply voltage with respect to AGND
−0.3
∆V_CC-DD difference in voltage between V_CC and V_DD1, V_DD2
−0.3
V_n
DC voltage at pins 1, 2, 5, 6, 8 to 15, 19 and 20 with respect to DGND −0.3
V_{3, 17}
DC voltage at pins 3 and 17 with respect to AGND
−0.3
∆V_GND
difference in voltage between AGND and DGND (these pins should be −0.3
connected together)
T_stg
storage temperature
−55
T_amb
operating ambient temperature
−30
MAX.
UNIT
+6.0
V
+6.0
V
+6.0
V
V_DD1 + 0.3 V
V_CC + 0.3 V
+0.3
V
+125
°C
+85
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
1997 Sep 03
7