TDA8808T Datasheet, PDF (7/22 Pages) NXP Semiconductors – Photo diode signal processor for compact disc players

Philips Semiconductors
Photo diode signal processor for compact
disc players
Product specification
TDA8808T
TDA8808AT
CHARACTERISTICS
V_P = + 5 V; V_GND = 0 V; V_ext = −5 V (TDA8808T); V_ext = + 10 V (TDA8808AT); V_RE1 = V_RE2 = 3,5 V; V_FE = V_FElag = 0 V
(TDA8808T); V_FE = V_FElag = 5 V (TDA8808AT); R_{FOC START} = 3,3 kΩ; I_Beq = I_Bgc = 50 µA (current sources); T_amb = 25 °C;
all voltages measured with respect to V_GND, unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS MIN.
TYP.
MAX. UNIT
V_P
V_ext
V_ext
I_Q
V_Beq
I_Beq
V_Bgc
I_Bgc
V_DEC
Z_DEC
V_HFin
I_HFin(p-p)
Z_HFin
G1(max)
G1(min)
G2
G3
φ
Supply
Supply voltage range
External voltage range
TDA8808T
TDA8808AT
Quiescent supply current
Reference input (Beq)
Input voltage level
Input current
Reference input (Bgc)
Input voltage level
Input current
Decoupling input (DEC)
Input voltage level
Input impedance
HF input (HFin)
Input voltage level
HF input current
(peak-to-peak value)
Input impedance
HF part
DC characteristics
Gain ( G1) = -^∆--_∆-V---I-^H-_H---^FF---^oi--_n-^u--^t
Maximum gain
Minimum gain
AC characteristics
Gain ( G2) = 20 log ^VV-----OO----¹²
Gain ( G3) = 20 log ^VV-----OO----¹²
Phase of input/output signal
at 1 MHz
V_Si/RD = 0 V
4,5
−5,5
V_P
7,5
500
−
1,15
−
−
−
−
f_HFin = 100 kHz 3
0,5
5,0
−5,0
10
10
560
−50
1,25
−50
V_P−1,4
2
1,4
−
1
5,5
V
0
V
12
V
12,5
mA
620
mV
−
µA
1,35
V
−
µA
−
V
−
kΩ
−
V
10
µA
2
kΩ
I_HFin = ± 1 µA
V_GCHF = 4 V
390
480
V_GCHF = 1,5V
−5
0
note 1
2
3,5
note 2
4
5,5
570
mV/µA
5
mV/µA
5
dB
7
dB
note 3
−
π/2
−
rad.
November 1987
7