TDA8808T Datasheet, PDF (12/22 Pages) NXP Semiconductors – Photo diode signal processor for compact disc players

Philips Semiconductors
Photo diode signal processor for compact
disc players
Product specification
TDA8808T
TDA8808AT
SYMBOL
PARAMETER
I_FE
I_FE
I_FE = S₆
I_FE
I_FE
I_FE
I_D1 = I_D4 = 2 µA;
I_D2 = I_D3 = 1 µA
I_D1 = I_D4 = 1 µA;
I_D2 = I_D3 = 2 µA
I_D1 = I_D4 = 2 µA;
I_D2 = I_D3 = 1 µA
I_D1 = I_D4 = 1 µA;
I_D2 = I_D3 = 2 µA
I_D1 = I_D2 =
I_D3 = I_D4 = 1 µA
I_D1 = I_D2 =
I_D3 = I_D4 = 0
DODS logic input (pin 12)
VDODS
VDODS
IDODS
Switching levels
input voltage LOW
input voltage HIGH
Input source current
Starting input (Sc)
V_Sc
V_Sc
Z_Sc
I_Sc
I_Sc
Output voltage
Output voltage
Output impedance
Output source current
Output sink current
Si/RD logic input/output
(pin 20)
Voltage ‘forced LOW’
V_Si/RD
V_Si/RD
V_Si/RD
I_Si/RD
V_TL
V_TL
Switching levels
input voltage LOW
input voltage HIGH Z
Input source current LOW
TL logic output (pin 11)
Output voltage level LOW
Output voltage level HIGH
CONDITIONS MIN.
TYP.
MAX. UNIT
V_Sc = 1,75 V
−20%
−2S₁+67+I_ST +10%
µA
V_Sc = 1,75 V
−10%
−4S₁−67+I_ST +20%
µA
V_Sc = V_P
−20% 67
+20% µA
V_Sc = V_P
−15%
−S₆
+15% µA
V_Sc = V_P
−10
0
+10
µA
V_Sc = V_P
−5
0
+5
µA
−
+2
−35
see Fig.9
Si/RD = LOW −
S1/RD = HIGH Z −
−
Si/RD = HIGH Z;
V_Sc = 1,5 V
−1,2
Si/RD = LOW 0,5
see Fig.9
I_Si/RD = 400 µA;
V_Sc = 2,5 V;
V_GCLF < 2,8 V −
−
I_Si/RD = −5 µA 2,4
−35
see Fig.6
I_TL = 400 µA;
(sink current) −
I_TL = −50 µA;
(source current) 2,4
−
−
−25
0
−
*
−1
1,2
0,15
−
2,8
−25
0,15
−
+0,8
V
−
V
−15
µA
−
V
V_P−0,5 V
−
MΩ
−0,8
µA
2,0
mA
0,4
V
+0,8
V
−
V
−15
µA
0,4
V
−
V
November 1987
12