TDA8808T Datasheet, PDF (14/22 Pages) NXP Semiconductors – Photo diode signal processor for compact disc players

Philips Semiconductors
Photo diode signal processor for compact
disc players
Product specification
TDA8808T
TDA8808AT
SYMBOL
PARAMETER
CONDITIONS MIN.
TYP.
MAX.
τLO
For AC (note 12) delay time
* Value to be fixed.
** X = don’t care.
−
*
−
Notes to the characteristics
1. Voltage output signal V_O1 measured at f_HFin = 700 kHz; I_HFin(p-p) = 7 µA; V_GCHF = 2,4 V.
Voltage output signal V_O2 measured at f_HFin = 100 kHz; I_HFin(p-p) = 7 µA; V_GCHF = 2,4 V.
2. Voltage output signal V_O1 measured at f_HFin = 1 MHz; I_HFin(p-p) = 7 µA; V_GCHF = 2,4 V.
Voltage output signal V_O2 measured at f_HFin = 100 kHz; I_HFin(p-p) = 7 µA; V_GCHF = 2,4 V.
3. Phase of input/output signal, group delay and flatness measured at I_HFin(p-p) = 1 µA; V_GCHF = 4 V.
Group delay τ = _d-d---w-^φ-- _{; ∆f ≈ 50 kHz.}
Flatness: ∆τ = τ_max − τ_min.
4. HF part output voltage for closed loop conditions; f_HFin = 500 kHz.
5. HF part output voltage for closed loop conditions; f_HFin = 0,1 to 1 MHz.
M₁ is the measured value of V_O1.
6. P₁ is the measured value of _I--D----₁----₍--1---I-₎-^R---₊-^e--¹--I--_D⁽---1-₂---⁾-₍--1----₎-- ⋅ --I--^D---¹----⁽-I--2_R----⁾_e---₁-⁺--₍---I2--^D--₎-²----⁽---2---⁾--
Where:
(1) are the current levels at f_i = 25 kHz.
(2) are the current levels at f_i = 1 kHz.
Measurement taken at V_GCLF = 3,5 V.
7. P₂ is the measured value of _I--D----₃----₍--1---I-₎-^R---₊-^e--²--I--_D⁽---1-₄---⁾-₍--1----₎-- ⋅ --I--^D---³----⁽-I--2_R----⁾_e---₂-⁺--₍---I2--^D--₎-⁴----⁽---2---⁾--
Where:
(1) are the current levels at f_i = 25 kHz.
(2) are the current levels at f_i = 1 kHz.
Measurement taken at V_GCLF = 3,5 V.
8. S₆ is the measured value of S₁ ⋅ -I-^D-4---^T- – 1, 1 I_Bgc
Measurement taken at V_GCLF = 3,5 V.
9. LF part reference current I_ret and low-pass filter output voltage for closed loop conditions.
Measurement taken at I_DT > I_DT3; ∆V_DET < V_DETn2 or ∆V_DET > V_DETp2.
10. FE output current measured at V_GCLF = 3, 5 V and Si ⁄ RD = HIGH Z; I_ST = ^V--R---F-_F--^O-_O---^CC-----^SS---_TT---_AA---_RR---_T-^T-
UNIT
ns
11. Laser supply transconductance for DC
G_LDC = _∆--^∆--V-I--^L-_L--^O-_M-- ( 0 < – I_LO < 2 mA)
November 1987
14