TDA8808T Datasheet, PDF (13/22 Pages) NXP Semiconductors – Photo diode signal processor for compact disc players

Philips Semiconductors
Photo diode signal processor for compact
disc players
Product specification
TDA8808T
TDA8808AT
SYMBOL
PARAMETER
Threshold total LF current
Output voltage
∆V_DET < V_DETn2 or
V_TL
∆V_DET > V_DETp2
V_TL
V_DETn1 < ∆V_DET < V_DETp1
V_DETn2 < V_DET < V_DETn1 or
V_TL
V_DETp1 < ∆V_DET < V_DETp2
V_DETn2 < V_DET < V_DETn1 or
V_TL
V_DETp1 < V_DET < V_DETp2
Output voltage
∆V_DET < V_DETn2 or
V_TL
∆V_DET > V_DETp2
V_TL
V_DETn2 < ∆V_DET < V_DETp2
V_TL
V_DETn2 < ∆V_DET < V_DETp2
ITL
Output sink current
ITL
Output source current
τ1
Delay times (see Fig.10)
τ2
τ3
τ4
V_LO
Z_LO
I_LO
I_LO
V_LM
I_LM
G_LDC
G_LDC
LO output (pin 17)
Output voltage
Output impedance
Output leakage current
Maximum output current
LM input (pin 18)
Input voltage
Input bias current
Laser supply
Transconductance
For DC (note 11)
CONDITIONS
I_DT2
DODS = HIGH
(≥ 2,4 V)
MIN.
−
TYP.
3,9
I_DT don’t care 2,4
−
I_DT don’t care 2,4
−
I_DT < I_DT2
2,4
−
I_DT > I_DT2
−
DODS = LOW
(≤ 0,8 V)
0,15
I_DT don’t care
I_DT < I_DT2
I_DT > I_DT2
V_TL = LOW
VTL = HIGH
see Fig.6
2,4
2,4
−
1
−
7
τ1−15%
or 6,5
7
τ3−10%
or 7
−
−
0,15
2,2
−100
8,5
−
8,5
−
MAX. UNIT
−
µA
−
V
−
V
−
V
0,4
V
−
V
−
V
0,4
V
−
mA
−50
µA
10
µs
τ1+ 5% µs
or 10
10
µs
τ3+10% µs
or 10
−
−
−
95
Si/RD = LOW −10
−0,1
Si/RD = HIGH Z −8
−4
V_P - 0,5 V
−
kΩ
0
µA
−2
mA
closed loop
185
205
−2
−
225
mV
−
µA
Si/RD = HIGH Z −
0,5
Si/RD = LOW −
0
−
A/V
−
A/V
November 1987
13