PMN27XPE_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET

NXP Semiconductors
120
R_DSon
(mΩ)
80
-1.8 V -2 V
-2.2 V
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-2.4 V
-2.5 V
PMN27XPE
20 V, single P-channel Trench MOSFET
120
R_DSon
(mΩ)
80
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40
-3 V
40
-4.5 V
V_GS = -8 V
T_j = 150 °C
T_j = 25 °C
0
0
-8
T_j = 25 °C
-16
-24
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
-24
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I_D
(A)
-16
0
0
-2
I_D = -3 A
-4
-6
V_GS (V)
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
1.50
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a
1.25
1.00
-8
0.75
T_j = 150 °C
T_j = 25 °C
0
0
-1
V_DS > I_D × R_DSon
-2
-3
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.50
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
PMN27XPE
Product data sheet
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20 September 2012
© NXP B.V. 2012. All rights reserved
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