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PMN27XPE_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET
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NXP Semiconductors
PMN27XPE
20 V, single P-channel Trench MOSFET
Symbol
RDSon
Parameter
drain-source on-state
resistance
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
VGS = -4.5 V; ID = -3 A; Tj = 150 °C
VGS = -2.5 V; ID = -3 A; Tj = 25 °C
VDS = -10 V; ID = -3 A; Tj = 25 °C
VDS = -10 V; ID = -3 A; VGS = -4.5 V;
Tj = 25 °C
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -10 V; ID = -3 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = -1.3 A; VGS = 0 V; Tj = 25 °C
-24
-8 V -4.5 V -3 V
ID
-2.5 V
(A)
-16
017aaa763
VGS = -2.4 V
-2.2 V
- 10- 3
ID
(A)
- 10- 4
-2 V
-8
- 10- 5
-1.8 V
Min Typ Max Unit
-
-
-10 µA
-
27
30
mΩ
-
56
64
mΩ
-
39
44
mΩ
-
16
-
S
-
15
22.5 nC
-
3
-
nC
-
3
-
nC
-
1770 -
pF
-
254 -
pF
-
180 -
pF
-
15
-
ns
-
22
-
ns
-
37
-
ns
-
29
-
ns
-
-0.7 -1.2 V
017aaa129
(1)
(2)
(3)
0
0
-1
-2
-3
-4
VDS (V)
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
- 10- 6
0.0
- 0.5
Tj = 25 °C; VDS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
- 1.0
- 1.5
VGS (V)
PMN27XPE
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
20 September 2012
6 / 13
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