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PMN27XPE_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET
NXP Semiconductors
PMN27XPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S
017aaa259
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN27XPE
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
PMN27XPE
Marking code
WC
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tamb = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
VGS = -4.5 V; Tamb = 25 °C
[1]
VGS = -4.5 V; Tamb = 100 °C
[1]
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
PMN27XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 September 2012
Min Max Unit
-
-20 V
-12 12
V
-
-5.7 A
-
-4.4 A
-
-3.5 A
-
-22 A
-
530 mW
-
1250 mW
-
8330 mW
© NXP B.V. 2012. All rights reserved
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