PMEG6030ELP_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 60 V, 3 A low leakage current Schottky barrier rectifier

NXP Semiconductors
PMEG6030ELP
60 V, 3 A low leakage current Schottky barrier rectifier
10
I_F
(1)
(A)
1
(2)
(3)
10^-1
aaa-017365
10^-2
10^-3
(4) (5)
(6)
10^-4
0.0
0.2
0.4
(1) T_j = 175 °C
(2) T_j = 150 °C
(3) T_j = 125 °C
(4) T_j = 85 °C
(5) T_j = 25 °C
(6) T_j = −40 °C
0.6
0.8
V_F (V)
Fig. 4. Forward current as a function of forward
voltage; typical values
500
C_d
(pF)
400
aaa-017369
300
200
100
0
0
20
40
60
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
I_R ^10-2
(1)
(A) ₁₀-3
(2)
10^-4
(3)
aaa-017366
10^-5
(4)
10^-6
10^-7
(5)
10^-8
10^-9
10^-10
10^-11
(6)
10^-12
0
20
(1) T_j = 175 °C
(2) T_j = 150 °C
(3) T_j = 125 °C
(4) T_j = 85 °C
(5) T_j = 25 °C
(6) T_j = −40 °C
40
60
V_R (V)
Fig. 5. Reverse current as a function of reverse
voltage; typical values
2.0
P_F(AV)
(W)
1.6
aaa-017370
(4)
(3)
1.2
(2)
(1)
0.8
0.4
0.0
0.0
1.5
T_j = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
3.0
4.5
I_F(AV) (A)
Fig. 7.
Average forward power dissipation as a
function of average forward current; typical
values
PMEG6030ELP
Product data sheet
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7 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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