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| PMEG6030ELP_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 60 V, 3 A low leakage current Schottky barrier rectifier | |||
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NXP Semiconductors
PMEG6030ELP
60 V, 3 A low leakage current Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
V(BR)R
VF
IR
Cd
trr
VFRM
Characteristics
Parameter
Conditions
reverse breakdown
voltage
IR = 1 mA; Tj = 25 °C; tp = 300 µs;
δ = 0.02
forward voltage
IF = 0.1 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 0.5 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 0.7 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 1 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 1.6 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 2 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 3 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 3 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 125 °C
reverse current
VR = 10 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
VR = 40 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
VR = 60 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
VR = 60 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 125 °C
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 4 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
60
-
-
V
-
440 500 mV
-
495 555 mV
-
505 565 mV
-
525 585 mV
-
550 620 mV
-
570 640 mV
-
600 670 mV
-
510 630 mV
-
20
-
nA
-
80
-
nA
-
340 1000 nA
-
440 2100 µA
-
315 -
pF
-
190 -
pF
-
125 -
pF
-
12
-
ns
-
560 -
mV
PMEG6030ELP
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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