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PMEG6030ELP_15 Datasheet, PDF (10/15 Pages) NXP Semiconductors – 60 V, 3 A low leakage current Schottky barrier rectifier
NXP Semiconductors
IF
PMEG6030ELP
60 V, 3 A low leakage current Schottky barrier rectifier
VF
Fig. 14. Forward recovery definition
time
VFRM
VF
time
001aab912
P
tcy
duty cycle δ =
tp
tcy
tp
Fig. 15. Duty cycle definition
t
006aac658
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG6030ELP
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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