PMEG060V050EPD_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 60 V, 5 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG060V050EPD
60 V, 5 A low VF MEGA Schottky barrier rectifier
10²
I_F
(A)
10 (1)
(2)
(3)
1 ⁽⁴⁾
10^-1
(5) (6) (7)
aaa-015003
10^-2
0
0.3
pulsed condition
(1) T_j = 175 °C
(2) T_j = 150 °C
(3) T_j = 125 °C
(4) T_j = 100 °C
(5) T_j = 85 °C
(6) T_j = 25 °C
(7) T_j = −40 °C
0.6
0.9
V_F (V)
Fig. 4. Forward current as a function of forward
voltage; typical values
1.0
C_d
(nF)
0.8
aaa-015005
0.6
0.4
0.2
10^-1
I_R
(A) _10-2
aaa-015004
10^-3
10^-4
(1) (2) (3) (4)
10^-5
(5)
10^-6
10^-7
10^-8
(6)
10^-9
0
20
pulsed condition
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 100 °C
(4) T_j = 85 °C
(5) T_j = 25 °C
(6) T_j = −40 °C
40
60
V_R (V)
Fig. 5. Reverse current as a function of reverse
voltage; typical values
4
P_F(AV)
(W)
3
2
(2)
(1)
aaa-015006
(5)
(4)
(3)
1
0
0
20
40
60
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
0
0
2
4
6
8
I_F(AV) (A)
T_j = 100 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 0.8
(5) δ = 1
PMEG060V050EPD
Fig. 7.
Average forward power dissipation as a
function of average forward current; typical
values
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
22 January 2015
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