PMEG060V050EPD_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – 60 V, 5 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG060V050EPD
60 V, 5 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_R
reverse voltage
T_j = 25 °C
I_F
forward current
T_sp = 160 °C; δ = 1
I_F(AV)
average forward current
δ = 0.5; f = 20 kHz; T_sp ≤ 165 °C;
square wave
I_FSM
non-repetitive peak forward
t_p = 8 ms; T_j(init) = 25 °C; square wave
current
P_tot
total power dissipation
T_amb ≤ 25 °C
[1]
[2]
[3]
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Min Max Unit
-
60
V
-
7
A
-
5
A
-
160 A
-
1.66 W
-
2.15 W
-
3.75 W
-
175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm}²_.
[3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
PMEG060V050EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 15