 English |
|
|
|
|
|
|
|
| PMEG060V050EPD_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 60 V, 5 A low VF MEGA Schottky barrier rectifier | |||
| |||
| ◁ |
NXP Semiconductors
PMEG060V050EPD
60 V, 5 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
V(BR)R
VF
IR
Cd
trr
trr
VFRM
Characteristics
Parameter
Conditions
reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp ⤠1.2 ms;
δ ⤠0.12; pulsed
forward voltage
IF = 1 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
IF = 2 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 125 °C; pulsed
reverse current
VR = 5 V; tp ⤠3 ms; δ ⤠0.3; Tj = 25 °C;
pulsed
VR = 10 V; tp ⤠3 ms; δ ⤠0.3;
Tj = 25 °C; pulsed
VR = 30 V; tp ⤠3 ms; δ ⤠0.3;
Tj = 25 °C; pulsed
VR = 60 V; tp ⤠3 ms; δ ⤠0.3;
Tj = 25 °C; pulsed
VR = 10 V; tp ⤠3 ms; δ ⤠0.3;
Tj = 125 °C; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
step recovery
Tj = 25 °C
reverse recovery time dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A;
ramp recovery
VR = 26 V
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
60
-
-
V
-
350 400 mV
-
390 -
mV
-
480 560 mV
-
435 -
mV
-
6
-
µA
-
10
30
µA
-
20
-
µA
-
100 400 µA
-
8
-
mA
-
510 -
pF
-
175 -
pF
-
17
-
ns
-
12
-
ns
-
335 -
mV
PMEG060V050EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
6 / 15
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese