PHP83N03LT Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
2.5
VGS(th)
(V)
max
2
typ
1.5
min
1
03aa33
10-1
ID
(A) 10-2
10-3
10-4
03aa36
min _{typ max}
0.5
10-5
0
-60 -20 20
60 100 140 180
Tj (oC)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
VGS (V)
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
90
gfs V_DS > I_D x R_DSon
(S)
75
03ad90
60
Tj = 25 ºC
45
175 ºC
30
15
0
0
15
30
45
60 ID (A) 75
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
104
Ciss,
Coss,
Crss
(pF)
103
03ad92
Ciss
Coss
Crss
102
10-1
1
10 VDS (V) 102
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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