PHP83N03LT Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
120
Pder ₁₁₀
(%) ₁₀₀
90
80
70
60
50
40
30
20
10
0
0
20 40
03ac97
60 80 100 120 140 160 180
Tmb (oC)
P_der = _P-------^P----^t--^o--^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A) ^{RDSon = VDS / ID}
102
03ad95
120
Ider
(%)
100
80
60
40
20
0
0
60
120 Tmb (ºC) 180
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ad86
tp = 10 µs
100 µs
10
P
D.C.
δ
=
tp
T
1 ms
10 ms
100 ms
tp
t
T
1
1
10
VDS (V) 102
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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