PHP83N03LT Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS drain-source breakdown voltage
V_GS(th) gate-source threshold voltage
I_DSS
drain-source leakage current
I_GSS
R_DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
I_D = 1 mA; V_DS = V_GS; Figure 9
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 25 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±5 V; V_DS = 0 V
V_GS = 5 V; I_D = 25 A; Figure 7 and 8
T_j = 25 °C
T_j = 175 °C
V_GS = 10 V; I_D = 25 A
T_j = 25 °C
g_fs
forward transconductance
Q_g(tot) total gate charge
Q_gs
gate-source charge
Q_gd
gate-drain (Miller) charge
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
t_d(on)
turn-on delay time
t_r
turn-on rise time
t_d(off)
turn-off delay time
t_f
turn-off fall time
Source-drain diode
V_DS = 25 V; I_D = 30 A; Figure 11
I_D = 30 A; V_DD = 15 V; V_GS = 5 V; Figure 14
V_GS = 0 V; V_DS = 25 V; f = 1 MHz; Figure 12
V_DD = 15 V; I_D = 1 A; V_GS = 10 V; R_G = 6 Ω;
resistive load
V_SD
source-drain (diode forward) voltage I_S = 25 A; V_GS = 0 V; Figure 13
I_S = 40 A; V_GS = 0 V
Min Typ Max Unit
25 − − V
22 − − V
1 1.5 2 V
0.5 − − V
− − 2.3 V
− 0.05 10 µA
− − 500 µA
− 10 100 nA
− 10 12 mΩ
− 17 20.5 mΩ
− 6.5 9 mΩ
− 55 − S
− 33 − nC
− 7 − nC
− 12.5 − nC
− 1660 − pF
− 590 − pF
− 380 − pF
− 9 20 ns
− 14 30 ns
− 75 95 ns
− 60 80 ns
− 0.9 1.2 V
− 0.95 − V
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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