PHP83N03LT Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
75
ID
10 V 4.5 V
(A)
60
03ad87
3.5 V
Tj = 25 ºC
75
ID
(A)
60
VDS > ID x RDSon
03ad89
45
45
3V
30
30
15
0
0
VGS = 2.5 V
0.4
0.8
1.2
1.6 VDS (V) 2
15
0
0
175 ºC
Tj = 25 ºC
1
2
3 VGS (V) 4
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.06
RDSon
(Ω)
0.05
2.5 V
0.04
0.03
0.02
0.01
0
0
15
T_j = 25 °C
VGS = 3 V
03ad88
Tj = 25 ºC
3.5 V
4.5 V
10 V
30
45
60 ID (A) 75
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
03ad57
2
a
1.6
1.2
0.8
0.4
0
-60
0
60
120 Tj (ºC) 180
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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