PHP33NQ20T Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS™ standard level FET

Philips Semiconductors
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
5
V_GS(th)
(V)
4
3
2
max
typ
min
03aa32
10^-1
I_D
(A)
10^-2
10^-3
10^-4
03aa35
min typ max
1
10^-5
0
-60
0
60
120
180
T_j (°C)
10^-6
0
2
4
6
V_GS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
10
V_GS
(V)
8
I_D = 25 A
T_j = 25 °C
V_DS = 40 V
6
03ao16
100 V
160 V
4
2
0
0
10
20
30
40
Q_G (nC)
I_D = 25 A; V_DS = 40 V, 100 V and 160 V
Fig 11. Gate-source voltage as a function of gate charge; typical values.
9397 750 14003
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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