PHP33NQ20T Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS™ standard level FET

Philips Semiconductors
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PHP33NQ20T
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead SOT78
TO-220AB
PHB33NQ20T
D²-PAK
Plastic single-ended surface mounted package (D²-PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
25 °C ≤ T_j ≤ 175 °C
25 °C ≤ T_j ≤ 175 °C; R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_mb = 25 °C; Figure 1
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source (diode forward) current (DC) T_mb = 25 °C
I_SM
peak source (diode forward) current T_mb = 25 °C; pulsed; t_p ≤ 10 µs
Avalanche ruggedness
E_DS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; I_D = 10.4 A;
t_p = 0.14 ms; V_DD ≤ 200 V; R_GS = 50 Ω;
V_GS = 10 V; starting at T_j = 25 °C
Min
Max Unit
-
200
V
-
200
V
-
±20
V
-
32.7 A
-
23.1 A
-
65.4 A
-
230
W
−55
+175 °C
−55
+175 °C
-
32.7 A
-
65.4 A
-
190
mJ
9397 750 14003
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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