PHP33NQ20T Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS™ standard level FET

Philips Semiconductors
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
40
I_D
(A)
T_j = 25 °C
30
10 V 5 V
03ao11
4.6 V
125
R_DSon
(mΩ)
T_j = 25 °C
100
03ao12
V_GS = 4.4 V _{4.6 V}
4.4 V
20
75
4.2 V
5V
10 V
10
4V
V_GS = 3.8 V
0
0
1
2
3
4
5
V_DS (V)
50
25
0
10
20
30
40
I_D (A)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values.
40
03ao13
3
I_D
V_DS > I_D x R_DSon
(A)
a
30
2
03al52
20
175 °C
T_j = 25 °C
1
10
0
0
2
4
V_GS (V) ⁶
0
-60
0
60
120
180
T_j (°C)
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 14003
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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