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| PHP33NQ20T Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS™ standard level FET | |||
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Philips Semiconductors
PHP/PHB33NQ20T
N-channel TrenchMOS⢠standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
VDS = 160 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 15 A; Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 25 A; VDS = 100 V; VGS = 10 V;
Figure 11
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 13
VDS = 100 V; RL = 4 â¦;
VGS = 10 V; RG = 6 â¦
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 20 A; dIS/dt = â100 A/µs; VGS = 0 V
Qr
recovered charge
Min Typ Max Unit
200 -
-
V
180 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
-
1
µA
-
-
500 µA
-
10 100 nA
-
65 77 mâ¦
-
182 215 mâ¦
-
32.2 -
nC
-
6.5 -
nC
-
9.6 -
nC
-
1870 -
pF
-
230 -
pF
-
70 -
pF
-
12 -
ns
-
35 -
ns
-
43 -
ns
-
45 -
ns
-
0.87 1.2 V
-
150 -
ns
-
645 -
nC
9397 750 14003
Product data sheet
Rev. 01 â 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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