GTL2002 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 2-bit bi-directional low voltage translator

Philips Semiconductors
2-bit bi-directional low voltage translator
Product data sheet
GTL2002
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
V_I/O
V_SREF
V_DREF
V_GREF
I_PASS
T_amb
Input/output voltage (Sn, Dn)
DC source reference voltage¹
DC drain reference voltage
DC gate reference voltage
Pass transistor current
Operating ambient temperature range
In free air
NOTE:
1. V_SREF ≤ V_DREF – 1.5 V for best results in level shifting applications.
LIMITS
Min
Max
0
5.5
0
5.5
0
5.5
0
5.5
—
64
–40
+85
UNIT
V
V
V
V
mA
°C
ELECTRICAL CHARACTERISTICS
Over recommended operating free-air temperature range (unless otherwise noted)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN
TYP¹
V_OL
LOW-level output voltage
V_DD = 3.0 V; V_SREF = 1.365 V; V_Sn or V_Dn = 0.175 V;
I_clamp = 15.2 mA
—
260
V_IK
Input clamp voltage
I_I = –18 mA
V_GREF = 0 V
—
—
I_IH
Gate input leakage
V_I = 5 V
V_GREF = 0 V
—
—
C_I(GREF) Gate capacitance
V_I = 3 V or 0 V
—
19.4
C_IO(OFF) Off capacitance
V_O = 3 V or 0 V V_GREF = 0 V
—
7.4
C_IO(ON) On capacitance
V_O = 3 V or 0 V V_GREF = 3 V
—
18.6
V_GREF = 4.5 V
—
3.5
V_I = 0 V
V_GREF = 3 V
V_GREF = 2.3 V
I_O = 64 mA
—
4.4
—
5.5
r_on2
On-resistance
V_GREF = 1.5 V
V_GREF = 1.5 V
I_O = 30 mA
—
67
—
9
V_I = 2.4 V
V_GREF = 4.5 V
V_GREF = 3 V
I_O = 15 mA
—
7
—
58
V_I = 1.7 V
V_GREF = 2.3 V
—
50
NOTES:
1. All typical values are measured at T_amb = 25 °C
2. Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch.
On-state resistance is determined by the lowest voltage of the two (Sn or Dn) terminals.
MAX
350
–1.2
5
—
—
—
5
7
9
105
15
10
80
70
UNIT
mV
V
µA
pF
pF
pF
Ω
Ω
Ω
2004 Sep 29
7