BUK7880-55A_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
100
R_DSon
(mΩ)
90
003aab525
80
70
60
50
40
5
10
15 _{VGS (V)} 20
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2
a
03nc24
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20
20
60 100 140 180
T_j (°C)
Fig. 10. Normalized drain source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
6
V_DS (V) = 14
003aab522
V_DS (V) = 44
4
2
0
0
5
10 _{QG (nC)} 15
Fig. 11. Gate-source voltage as a function of gate
charge; typical values
10³
C
(pF)
10²
003aab520
C_iss
C_oss
C_rss
10
10^-1
1
10
V_DS (V) ¹⁰²
Fig. 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7880-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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