BUK7880-55A_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
50
003aab523
I_D
V_GS (V) = 20
(A)
40
15
12
10
9.5
9
30
8.5
8
7.5
20
7
6.5
6
10
5.5
5
4.5
0
0
2
4
6
8 _{VDS (V)10}
9
g_fs
(S)
8
7
6
5
5
003aab527
10
15
I_D (A) ²⁰
Fig. 5.
T_j = 25 °C
Output characteristics: drain current as a
Fig. 6.
function of drain-source voltage; typical values
T_j = 25 °C; V_DS = 15 V
Forward transconductance as a function of
drain current; typical values
15
I_D
(A)
12
003aab526
5
V_GS(th)
(V)
4
max
03aa32
9
3
typ
6
2
min
3
T_j = 150 °C
1
T_j = 25 °C
0
0
2
4
6
8
V_GS (V)
V_DS = 15 V
Fig. 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
- 60
0
60
120
180
T_j (°C)
Fig. 8. Gate-source threshold voltage as a function of
junction temperature
BUK7880-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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