BUK7880-55A_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7880-55A
N-channel TrenchMOS standard level FET
19 June 2015
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
2. Features and benefits
• AEC Q101 compliant
• Low conduction losses due to low on-state resistance
• Suitable for standard level gate drive sources
3. Applications
• 12 V and 24 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
V_GS = 10 V; T_sp = 25 °C; Fig. 2; Fig. 3
P_tot
total power dissipation T_sp = 25 °C; Fig. 1
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 10 A; T_j = 25 °C;
resistance
Fig. 9; Fig. 10
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-
source avalanche
energy
I_D = 7 A; V_sup ≤ 55 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55
V
-
-
7
A
-
-
8
W
-
68
80
mΩ
-
-
53
mJ
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