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BUK7880-55A_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 8
voltage
VGSth
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
voltage
Fig. 8
ID = 1 mA; VDS = VGS; Tj = 150 °C;
Fig. 8
IDSS
drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 150 °C;
resistance
Fig. 9; Fig. 10
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 9; Fig. 10
IDSS
drain leakage current VDS = 55 V; VGS = 0 V; Tj = 150 °C
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 10 A; VDS = 44 V; VGS = 10 V;
Fig. 11
QGD
gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 12
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 13
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V
BUK7880-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 June 2015
Min Typ Max Unit
55
-
-
V
50
-
-
V
2
3
4
V
-
-
4.4 V
1.2 -
-
V
-
0.05 10
µA
-
2
100 nA
-
2
100 nA
-
-
148 mΩ
-
68
80
mΩ
-
-
500 µA
-
12
-
nC
-
2.5 -
nC
-
5
-
nC
-
374 500 pF
-
92
110 pF
-
62
85
pF
-
8
-
ns
-
52
-
ns
-
17
-
ns
-
9
-
ns
-
0.85 1.2 V
-
33
-
ns
-
31
-
nC
© NXP Semiconductors N.V. 2015. All rights reserved
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