BUK7640-100A_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
maximum
typical
minimum
003aaf595
10^−1
I_D
(A)
10^−2
10^−3
10^−4
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2%
typical 98 %
1
10^−5
0
−100
0
100
200
T_j (°C)
I_D = 1 mA; V_DS = V_GS
Fig 13. Gate-source threshold voltage as a function of
junction temperature
10^−6
0
1
2
3
4
5
V_GS (V)
T_j = 25 °C; V_DS = V_GS
Fig 14. Sub-threshold drain current as a function of
gate-source voltage
4
C
(nF)
3
2
1
C_iss
C_oss
C_rss
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10
V_GS
(V)
8
6
4
2
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V_DS = 14 V
V_DS = 44 V
0
10^−2
10^−1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
10
20
30
40
Q_G (nC)
T_j = 25 °C
Fig 16. Gate-source voltage as a function of gate
charge; typical values
50
I_F
(A)
40
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30
20
T_j = 175 °C
T_j = 25 °C
10
0
0
0.4
0.8
1.2
V_SDS (V)
V_GS = 0 V
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7640-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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