BUK7640-100A_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
100
P_der
(%)
80
60
40
20
0
0
003aaf471
50
100
150
200
T_mb (°C)
100
I_D
(%)
80
60
40
20
0
0
003aaf586
50
100
150
200
T_mb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
V_GS ≥ 10 V
Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
(A)
R_DS(on) = V_DS / I_D
10²
003aaf587
tp = 1 μs
10 μs
100 μs
10
1 ms
DC
10 ms
100 ms
1
1
10
10²
10³
V_DS (V)
T_mb = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
100
W_DSS
(%)
80
003aaf600
60
40
20
0
20
60
100
140
180
T_mb (°C)
I_D = 75 A
Fig 4. Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
BUK7640-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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