BUK7640-100A_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
50
I_D
(A)
40
V_GS (V) = 10
003aaf589
8
6
0.1
R_DS(on)
(Ω)
0.08
4.8 5
5.2 5.4
003aaf590
30
5.4
20
5.2
10
0
0
5
4.8
4.6
4.4
0.4
0.8
1.2
1.6
2.0
V_DS (V)
T_j = 25 °C
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
0.06
6
0.04
8
0.02
0
V_GS (V) = 10
10
20
30
40
50
I_D (A)
T_j = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
38
R_DS(on)
(Ω)
34
30
003aaf591
40
I_D
(A)
30
20
10
003aaf592
T_j = 25 °C
T_j = 175 °C
26
1
2
3
4
5
V_GS (V)
T_j = 25 °C; I_D = 25 A
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
0
0
2
4
6
8
V_GS (V)
V_DS > I_D x R_DSon
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
80
g_fs
(S)
60
40
20
003aaf593
3
a
2.5
2
1.5
1
003aaf594
0
0
10
20
30
40
I_D (A)
T_j = 25 °C; V_DS > I_D x R_DSon
0.5
−100
0
100
200
T_mb (°C)
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7640-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
6 of 12