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BUK7640-100A_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
102
lAV
(A)
10
003aaf601
25 °C
Tj prior to avalanche = 150 °C
Fig 5.
1
10−3
10−2
10−1
1
10
tAV (ms)
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
minimum footprint; FR4 board
Min Typ Max Unit
-
-
1.1 K/W
-
50 -
K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
10−1
10−2
0.2
0.1
0.05
0.02
0
10−3
10−7
10−5
003aaf588
P
tp
δ=
T
10−3
tp
t
T
10−1
10
t (s)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7640-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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