BUK7520-55A Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

Philips Semiconductors
BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
03aa32
5
4.5
VGS(th)
(V) ⁴
3.5
max.
3
typ.
2.5
2
min
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj (oC)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) _10-2
03aa35
10-3
10-4
min
typ
max
10-5
10-6
0
1
2
3
4
5
VGS (V)
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
25
03nc60
2500
03nc65
gfs
(S)
C (pF)
20
2000
15
10
5
0
0
20
40
60 ID (A) 80
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
1500
1000
Ciss
500
0
10-2
10-1
1
Coss
Crss
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07751
Product specification
Rev. 01 — 18 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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