BUK7520-55A Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

Philips Semiconductors
BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
T_mb = 25 °C; V_GS = 10 V
T_mb = 25 °C
V_GS = 10 V; I_D = 25 A
T_j = 25 °C
T_j = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
I_DM
peak drain current
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
T_mb = 25 °C; Figure 1
I_DR
reverse drain current (DC)
I_DRM
pulsed reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
W_DSS non-repetitive avalanche energy
unclamped inductive load; I_D = 48 A;
V_DS ≤ 55 V; V_GS = 10 V; R_GS = 50 Ω;
starting T_mb = 25 °C
Typ
Max Unit
−
55
V
−
54
A
−
118
W
−
175
°C
17
20
mΩ
−
40
mΩ
Min
Max Unit
−
55
V
−
55
V
−
±20
V
−
54
A
−
38
A
−
217
A
−
118
W
−55
+175 °C
−55
+175 °C
−
54
A
−
217
A
−
115
mJ
9397 750 07751
Product specification
Rev. 01 — 18 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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