BUK7520-55A Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

Philips Semiconductors
BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
120
Pder (%)
100
03na19
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider
(%)
100
03aa24
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
V_GS ≥ 4.5 V
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
03nc66
ID
(A)
RDSon = VDS/ ID
102
tp = 10 us
10 ^P
δ
=
tp
T
tp
t
T
1
1
D.C.
10
100 us
1 ms
10 ms
100 ms
VDS (V)
102
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07751
Product specification
Rev. 01 — 18 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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