BUK7520-55A Datasheet, PDF (4/15 Pages) NXP Semiconductors – N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

Philips Semiconductors
BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
R_th(j-mb)
thermal resistance from junction to mounting Figure 4
base
7.1 Transient thermal impedance
Value Unit
60
K/W
50
K/W
1.2
K/W
10
Zth(j-mb)
(K/W)
1 _{δ = 0.5}
0.2
10-1 ^0.1
0.05
0.02
10-2
Single Shot
10-3
10-6
10-5
10-4
10-3
03nc67
P
δ
=
tp
T
10-2
tp
t
T
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07751
Product specification
Rev. 01 — 18 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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