BUK7510-55AL Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
5
V_GS(th)
(V)
4
3
max
typ
03aa32
10^-1
I_D
(A)
10^-2
10^-3
03aa35
min typ max
2
min
10^-4
1
10^-5
0
-60
0
60
120
180
T_j (°C)
10^-6
0
2
4
6
V_GS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
40
003aaa732
8000
003aaa738
g_fs
C
(S)
(pF)
C_iss
35
6000
C_oss
30
4000
C
rss
25
2000
20
0
20
40
60 _{ID (A)} 80
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
0
10^-1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 14362
Product data sheet
Rev. 01 — 31 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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