BUK7510-55AL Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
120
P_der
(%)
80
40
03aa16
150
I_D
(A)
100
(1)
50
003aaa726
0
0
50
100
150
200
T_mb (°C)
P_der = _P-------^P----^t--^o---^t------- × 100 %
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
10³
Limit R_DSon = V_DS / I_D
I_D
(A)
10²
(1)
10
0
0
50
100
150
200
T_mb (°C)
V_GS ≥ 5 V
(1) Capped at 75 A due to package.
Fig 2. Continuous drain current as a function of
mounting base temperature.
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t_p = 10 µ s
100 µs
1 ms
DC
10 ms
100 ms
1
1
10
V_DS (V)
10²
T_mb = 25 °C; I_DM is single pulse.
(1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 14362
Product data sheet
Rev. 01 — 31 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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