BUK7510-55AL Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
400
I_D
(A) ₂₀
18
300 ₁₆
14
12
200
100
0
0
2
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V_GS (V) = 10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
V_DS (V)
18
R_DSon
(mΩ)
14
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10
6
5
10
15 _{VGS (V)} 20
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
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2
7 8 9 10
R_DSon
a
(mΩ)
15
1.5
03ne89
10
1
V_GS (V) = 20
5
0.5
0
0
100
200
300
400
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R----^D----^S--^o---ⁿ--------
R_{DSon(25°C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 14362
Product data sheet
Rev. 01 — 31 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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