BUK7510-55AL Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
Rev. 01 — 31 March 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically
optimized for linear operation.
1.2 Features
s TrenchMOS™ technology
s 175 °C rated
s Q101 compliant
s Stable operation in linear mode.
1.3 Applications
s Automotive systems
s DC linear motor control
s Repetitive clamped inductive
switching
s 12 V and 24 V loads.
1.4 Quick reference data
s E_DS(AL)S ≤ 1.1 J
s I_D ≤ 75 A
2. Pinning information
s R_DSon = 8.5 mΩ (typ)
s P_tot ≤ 300 W.
Table 1: Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
mb mounting base;
connected to drain (D)
Simplified outline
mb
mb
2
13
SOT404 (D2PAK)
Symbol
D
G
mbb076 S
123
SOT78 (TO-220AB)